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SQ2389ES-T1_GE3

SQ2389ES-T1_GE3

For Reference Only

Part Number SQ2389ES-T1_GE3
PNEDA Part # SQ2389ES-T1_GE3
Description MOSFET P-CHAN 40V SO23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 154,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ2389ES-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ2389ES-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ2389ES-T1_GE3, SQ2389ES-T1_GE3 Datasheet (Total Pages: 10, Size: 254.78 KB)
PDFSQ2389ES-T1_GE3 Datasheet Cover
SQ2389ES-T1_GE3 Datasheet Page 2 SQ2389ES-T1_GE3 Datasheet Page 3 SQ2389ES-T1_GE3 Datasheet Page 4 SQ2389ES-T1_GE3 Datasheet Page 5 SQ2389ES-T1_GE3 Datasheet Page 6 SQ2389ES-T1_GE3 Datasheet Page 7 SQ2389ES-T1_GE3 Datasheet Page 8 SQ2389ES-T1_GE3 Datasheet Page 9 SQ2389ES-T1_GE3 Datasheet Page 10

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SQ2389ES-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs94mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 20V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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