SQ2348ES-T1_GE3
For Reference Only
| Part Number | SQ2348ES-T1_GE3 |
| PNEDA Part # | SQ2348ES-T1_GE3 |
| Description | MOSFET N-CH 30V 8A SOT-23 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 137,406 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQ2348ES-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SQ2348ES-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SQ2348ES-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 57A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 28.5A, 10V Vgs(th) (Max) @ Id 4V @ 2.85mA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 300V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature 150°C Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
