SPW24N60C3FKSA1
For Reference Only
| Part Number | SPW24N60C3FKSA1 |
| PNEDA Part # | SPW24N60C3FKSA1 |
| Description | MOSFET N-CH 650V 24.3A TO-247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,482 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPW24N60C3FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPW24N60C3FKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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SPW24N60C3FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 24.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15.4A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1.2kV Current - Continuous Drain (Id) @ 25°C 100A Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D3Pak Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
