SPP20N60CFDHKSA1
For Reference Only
| Part Number | SPP20N60CFDHKSA1 |
| PNEDA Part # | SPP20N60CFDHKSA1 |
| Description | MOSFET N-CH 650V TO-220AB |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,876 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPP20N60CFDHKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPP20N60CFDHKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPP20N60CFDHKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 3A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 94mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 985pF @ 75V FET Feature - Power Dissipation (Max) 2.1W (Ta), 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V Rds On (Max) @ Id, Vgs 64mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UF6 Package / Case 6-SMD, Flat Leads |
