SPP15P10PLHXKSA1
For Reference Only
| Part Number | SPP15P10PLHXKSA1 |
| PNEDA Part # | SPP15P10PLHXKSA1 |
| Description | MOSFET P-CH 100V 15A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,364 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPP15P10PLHXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPP15P10PLHXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPP15P10PLHXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 11.3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1.54mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V FET Feature - Power Dissipation (Max) 550W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS220 Package / Case TO-220-3, Short Tab |
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
