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SPP11N60S5HKSA1

SPP11N60S5HKSA1

For Reference Only

Part Number SPP11N60S5HKSA1
PNEDA Part # SPP11N60S5HKSA1
Description MOSFET N-CH 650V 11A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPP11N60S5HKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPP11N60S5HKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SPP11N60S5HKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1460pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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