Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPP07N60CFDHKSA1

SPP07N60CFDHKSA1

For Reference Only

Part Number SPP07N60CFDHKSA1
PNEDA Part # SPP07N60CFDHKSA1
Description MOSFET N-CH 650V 6.6A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPP07N60CFDHKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPP07N60CFDHKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPP07N60CFDHKSA1 Datasheet
  • where to find SPP07N60CFDHKSA1
  • Infineon Technologies

  • Infineon Technologies SPP07N60CFDHKSA1
  • SPP07N60CFDHKSA1 PDF Datasheet
  • SPP07N60CFDHKSA1 Stock

  • SPP07N60CFDHKSA1 Pinout
  • Datasheet SPP07N60CFDHKSA1
  • SPP07N60CFDHKSA1 Supplier

  • Infineon Technologies Distributor
  • SPP07N60CFDHKSA1 Price
  • SPP07N60CFDHKSA1 Distributor

SPP07N60CFDHKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs700mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

The Products You May Be Interested In

TK35S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

10.3mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 10V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF1902GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

85mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 15V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

2N7002E

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

240mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

21pF @ 5V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

IRF3314STRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF7420TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

14mOhm @ 11.5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3529pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

AQY210S

AQY210S

Panasonic Electric Works

SSR RELAY SPST-NO 120MA 0-350V

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

BLM18KG121TN1D

BLM18KG121TN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

PIC16LF877A-I/L

PIC16LF877A-I/L

Microchip Technology

IC MCU 8BIT 14KB FLASH 44PLCC

PSMN4R5-30YLC,115

PSMN4R5-30YLC,115

Nexperia

MOSFET N-CH 30V 84A LFPAK

PI3USB30532ZLE

PI3USB30532ZLE

Diodes Incorporated

IC MUX/DEMUX USB 3.0 40TQFN

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

MAX11207EEE+T

MAX11207EEE+T

Maxim Integrated

IC ADC 20BIT SIGMA-DELTA 16QSOP

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

ISL6124IRZA-T

ISL6124IRZA-T

Renesas Electronics America Inc.

IC POWER SUPPLY SEQUENCER 24QFN

4608X-102-682LF

4608X-102-682LF

Bourns

RES ARRAY 4 RES 6.8K OHM 8SIP

MX30LF1G18AC-XKI

MX30LF1G18AC-XKI

Macronix

IC FLASH 1G PARALLEL 63VFBGA