SPP07N60CFDHKSA1
For Reference Only
Part Number | SPP07N60CFDHKSA1 |
PNEDA Part # | SPP07N60CFDHKSA1 |
Description | MOSFET N-CH 650V 6.6A TO-220 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 8,262 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
SPP07N60CFDHKSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | SPP07N60CFDHKSA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SPP07N60CFDHKSA1 Datasheet
- where to find SPP07N60CFDHKSA1
- Infineon Technologies
- Infineon Technologies SPP07N60CFDHKSA1
- SPP07N60CFDHKSA1 PDF Datasheet
- SPP07N60CFDHKSA1 Stock
- SPP07N60CFDHKSA1 Pinout
- Datasheet SPP07N60CFDHKSA1
- SPP07N60CFDHKSA1 Supplier
- Infineon Technologies Distributor
- SPP07N60CFDHKSA1 Price
- SPP07N60CFDHKSA1 Distributor
SPP07N60CFDHKSA1 Specifications
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 700mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 5V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
The Products You May Be Interested In
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series U-MOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 35A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 10.3mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 10V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK+ Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 240mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 14mOhm @ 11.5A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 3529pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |