Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPN04N60S5

SPN04N60S5

For Reference Only

Part Number SPN04N60S5
PNEDA Part # SPN04N60S5
Description MOSFET N-CH 600V 0.8A SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPN04N60S5 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPN04N60S5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPN04N60S5, SPN04N60S5 Datasheet (Total Pages: 10, Size: 5,042.91 KB)
PDFSPN04N60S5 Datasheet Cover
SPN04N60S5 Datasheet Page 2 SPN04N60S5 Datasheet Page 3 SPN04N60S5 Datasheet Page 4 SPN04N60S5 Datasheet Page 5 SPN04N60S5 Datasheet Page 6 SPN04N60S5 Datasheet Page 7 SPN04N60S5 Datasheet Page 8 SPN04N60S5 Datasheet Page 9 SPN04N60S5 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPN04N60S5 Datasheet
  • where to find SPN04N60S5
  • Infineon Technologies

  • Infineon Technologies SPN04N60S5
  • SPN04N60S5 PDF Datasheet
  • SPN04N60S5 Stock

  • SPN04N60S5 Pinout
  • Datasheet SPN04N60S5
  • SPN04N60S5 Supplier

  • Infineon Technologies Distributor
  • SPN04N60S5 Price
  • SPN04N60S5 Distributor

SPN04N60S5 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

254W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SUM90N06-5M5P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 272W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SSM6J801R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

32.5mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.8nC @ 4.5V

Vgs (Max)

+6V, -8V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP-F

Package / Case

6-SMD, Flat Leads

SCT3030ALHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

39mOhm @ 27A, 18V

Vgs(th) (Max) @ Id

5.6V @ 13.3mA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 18V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1526pF @ 500V

FET Feature

-

Power Dissipation (Max)

262W

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

SPP20N60C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

SMBJ58A

SMBJ58A

Taiwan Semiconductor Corporation

TVS DIODE 58V 93.6V DO214AA

TDA04H0SB1

TDA04H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

LT1963AES8#PBF

LT1963AES8#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.5A 8SOIC

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN

B320A-13-F

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

M4A5-32/32-10JNC

M4A5-32/32-10JNC

Lattice Semiconductor Corporation

IC CPLD 32MC 10NS 44PLCC

NTHD4102PT1G

NTHD4102PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

LTC1569CS8-6#PBF

LTC1569CS8-6#PBF

Linear Technology/Analog Devices

IC FILTER 64KHZ LINEAR PHS 8SOIC

ABS05-32.768KHZ-T

ABS05-32.768KHZ-T

Abracon

CRYSTAL 32.7680KHZ 12.5PF SMD

WSL25122L000FEA

WSL25122L000FEA

Vishay Dale

RES 0.002 OHM 1% 1W 2512

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD