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SPI21N10

SPI21N10

For Reference Only

Part Number SPI21N10
PNEDA Part # SPI21N10
Description MOSFET N-CH 100V 21A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,212
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI21N10 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI21N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI21N10, SPI21N10 Datasheet (Total Pages: 8, Size: 512.7 KB)
PDFSPI21N10 Datasheet Cover
SPI21N10 Datasheet Page 2 SPI21N10 Datasheet Page 3 SPI21N10 Datasheet Page 4 SPI21N10 Datasheet Page 5 SPI21N10 Datasheet Page 6 SPI21N10 Datasheet Page 7 SPI21N10 Datasheet Page 8

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SPI21N10 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs38.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds865pF @ 25V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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