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SPI15N65C3XKSA1

SPI15N65C3XKSA1

For Reference Only

Part Number SPI15N65C3XKSA1
PNEDA Part # SPI15N65C3XKSA1
Description MOSFET N-CH 650V 15A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,148
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI15N65C3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI15N65C3XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI15N65C3XKSA1, SPI15N65C3XKSA1 Datasheet (Total Pages: 10, Size: 558.05 KB)
PDFSPI15N65C3HKSA1 Datasheet Cover
SPI15N65C3HKSA1 Datasheet Page 2 SPI15N65C3HKSA1 Datasheet Page 3 SPI15N65C3HKSA1 Datasheet Page 4 SPI15N65C3HKSA1 Datasheet Page 5 SPI15N65C3HKSA1 Datasheet Page 6 SPI15N65C3HKSA1 Datasheet Page 7 SPI15N65C3HKSA1 Datasheet Page 8 SPI15N65C3HKSA1 Datasheet Page 9 SPI15N65C3HKSA1 Datasheet Page 10

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SPI15N65C3XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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