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SPI08N50C3XKSA1

SPI08N50C3XKSA1

For Reference Only

Part Number SPI08N50C3XKSA1
PNEDA Part # SPI08N50C3XKSA1
Description MOSFET N-CH 560V 7.6A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI08N50C3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI08N50C3XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI08N50C3XKSA1, SPI08N50C3XKSA1 Datasheet (Total Pages: 14, Size: 726.96 KB)
PDFSPI08N50C3HKSA1 Datasheet Cover
SPI08N50C3HKSA1 Datasheet Page 2 SPI08N50C3HKSA1 Datasheet Page 3 SPI08N50C3HKSA1 Datasheet Page 4 SPI08N50C3HKSA1 Datasheet Page 5 SPI08N50C3HKSA1 Datasheet Page 6 SPI08N50C3HKSA1 Datasheet Page 7 SPI08N50C3HKSA1 Datasheet Page 8 SPI08N50C3HKSA1 Datasheet Page 9 SPI08N50C3HKSA1 Datasheet Page 10 SPI08N50C3HKSA1 Datasheet Page 11

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SPI08N50C3XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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