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SPI07N60C3HKSA1

SPI07N60C3HKSA1

For Reference Only

Part Number SPI07N60C3HKSA1
PNEDA Part # SPI07N60C3HKSA1
Description MOSFET N-CH 650V 7.3A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI07N60C3HKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI07N60C3HKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SPI07N60C3HKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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