Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPD26N06S2L-35

SPD26N06S2L-35

For Reference Only

Part Number SPD26N06S2L-35
PNEDA Part # SPD26N06S2L-35
Description MOSFET N-CH 55V 30A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD26N06S2L-35 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD26N06S2L-35
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPD26N06S2L-35, SPD26N06S2L-35 Datasheet (Total Pages: 8, Size: 264.47 KB)
PDFSPD26N06S2L-35 Datasheet Cover
SPD26N06S2L-35 Datasheet Page 2 SPD26N06S2L-35 Datasheet Page 3 SPD26N06S2L-35 Datasheet Page 4 SPD26N06S2L-35 Datasheet Page 5 SPD26N06S2L-35 Datasheet Page 6 SPD26N06S2L-35 Datasheet Page 7 SPD26N06S2L-35 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPD26N06S2L-35 Datasheet
  • where to find SPD26N06S2L-35
  • Infineon Technologies

  • Infineon Technologies SPD26N06S2L-35
  • SPD26N06S2L-35 PDF Datasheet
  • SPD26N06S2L-35 Stock

  • SPD26N06S2L-35 Pinout
  • Datasheet SPD26N06S2L-35
  • SPD26N06S2L-35 Supplier

  • Infineon Technologies Distributor
  • SPD26N06S2L-35 Price
  • SPD26N06S2L-35 Distributor

SPD26N06S2L-35 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageP-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3780pF @ 25V

FET Feature

-

Power Dissipation (Max)

320W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

PSMN015-60BS,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1220pF @ 30V

FET Feature

-

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFZ48VSTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1985pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AONS66612

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaSGT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

46A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.65mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 30V

FET Feature

-

Power Dissipation (Max)

6.2W (Ta), 208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (5x6)

Package / Case

8-PowerVDFN

TP2520N8-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

260mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

125pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-243AA (SOT-89)

Package / Case

TO-243AA

Recently Sold

ADM3076EYRZ

ADM3076EYRZ

Analog Devices

IC TRANSCEIVER FULL 1/1 14SOIC

PC28F00AP30EFA

PC28F00AP30EFA

Micron Technology Inc.

IC FLASH 1G PARALLEL 64EASYBGA

C5750X7S2A106K230KE

C5750X7S2A106K230KE

TDK

CAP CER 10UF 100V X7S 2220

NC7SZ125P5X

NC7SZ125P5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-5

MAX1853EXT

MAX1853EXT

Maxim Integrated

IC REG CHARGE PUMP INV SC70-6

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

STM32F103C8T7

STM32F103C8T7

STMicroelectronics

IC MCU 32BIT 64KB FLASH 48LQFP

MUR160

MUR160

ON Semiconductor

DIODE GEN PURP 600V 1A AXIAL

DMF3Z5R5H474M3DTA0

DMF3Z5R5H474M3DTA0

Murata

CAP SUPER 470MF 5.5V 3-SMD

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

ADG3304BRUZ

ADG3304BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 14TSSOP

FM24W256-GTR

FM24W256-GTR

Cypress Semiconductor

IC FRAM 256K I2C 1MHZ 8SOIC