Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPD25N06S2-40

SPD25N06S2-40

For Reference Only

Part Number SPD25N06S2-40
PNEDA Part # SPD25N06S2-40
Description MOSFET N-CH 55V 29A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD25N06S2-40 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD25N06S2-40
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPD25N06S2-40, SPD25N06S2-40 Datasheet (Total Pages: 8, Size: 257.6 KB)
PDFSPD25N06S2-40 Datasheet Cover
SPD25N06S2-40 Datasheet Page 2 SPD25N06S2-40 Datasheet Page 3 SPD25N06S2-40 Datasheet Page 4 SPD25N06S2-40 Datasheet Page 5 SPD25N06S2-40 Datasheet Page 6 SPD25N06S2-40 Datasheet Page 7 SPD25N06S2-40 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPD25N06S2-40 Datasheet
  • where to find SPD25N06S2-40
  • Infineon Technologies

  • Infineon Technologies SPD25N06S2-40
  • SPD25N06S2-40 PDF Datasheet
  • SPD25N06S2-40 Stock

  • SPD25N06S2-40 Pinout
  • Datasheet SPD25N06S2-40
  • SPD25N06S2-40 Supplier

  • Infineon Technologies Distributor
  • SPD25N06S2-40 Price
  • SPD25N06S2-40 Distributor

SPD25N06S2-40 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageP-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FQD7N20LTF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

750mOhm @ 2.75A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRL510S

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

540mOhm @ 3.4A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ZXMN6A25N8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1063pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STV160NF03LAT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

5350pF @ 25V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PowerSO

Package / Case

PowerSO-10 Exposed Bottom Pad

IPI60R190C6XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 100V

FET Feature

-

Power Dissipation (Max)

151W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

MC908AZ60ACFUER

MC908AZ60ACFUER

NXP

IC MCU 8BIT 60KB FLASH 64QFP

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

SP3232EET-L

SP3232EET-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

MCP4921T-E/SN

MCP4921T-E/SN

Microchip Technology

IC DAC 12BIT V-OUT 8SOIC

HSMS-285C-TR1G

HSMS-285C-TR1G

Broadcom

RF DIODE SCHOTTKY 2V SOT323

ADF4350BCPZ-RL7

ADF4350BCPZ-RL7

Analog Devices

IC SYNTH PLL VCO FN/IN 32LFCSP

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

L7805ABD2T-TR

L7805ABD2T-TR

STMicroelectronics

IC REG LINEAR 5V 1.5A D2PAK

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

TAJC337M006RNJ

TAJC337M006RNJ

CAP TANT 330UF 20% 6.3V 2312