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SPD07N20GBTMA1

SPD07N20GBTMA1

For Reference Only

Part Number SPD07N20GBTMA1
PNEDA Part # SPD07N20GBTMA1
Description MOSFET N-CH 200V 7A TO252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD07N20GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD07N20GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPD07N20GBTMA1, SPD07N20GBTMA1 Datasheet (Total Pages: 10, Size: 610.88 KB)
PDFSPD07N20GBTMA1 Datasheet Cover
SPD07N20GBTMA1 Datasheet Page 2 SPD07N20GBTMA1 Datasheet Page 3 SPD07N20GBTMA1 Datasheet Page 4 SPD07N20GBTMA1 Datasheet Page 5 SPD07N20GBTMA1 Datasheet Page 6 SPD07N20GBTMA1 Datasheet Page 7 SPD07N20GBTMA1 Datasheet Page 8 SPD07N20GBTMA1 Datasheet Page 9 SPD07N20GBTMA1 Datasheet Page 10

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SPD07N20GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs31.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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