SPD06N60C3BTMA1
For Reference Only
| Part Number | SPD06N60C3BTMA1 |
| PNEDA Part # | SPD06N60C3BTMA1 |
| Description | MOSFET N-CH 650V 6.2A TO-252 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,514 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 23 - Apr 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPD06N60C3BTMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPD06N60C3BTMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPD06N60C3BTMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series STripFET™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 725pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta), 84W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 (MP-3) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
