SPB80N10L
For Reference Only
| Part Number | SPB80N10L |
| PNEDA Part # | SPB80N10L |
| Description | MOSFET N-CH 100V 80A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,100 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SPB80N10L Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | SPB80N10L |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SPB80N10L Datasheet
- where to find SPB80N10L
- Infineon Technologies
- Infineon Technologies SPB80N10L
- SPB80N10L PDF Datasheet
- SPB80N10L Stock
- SPB80N10L Pinout
- Datasheet SPB80N10L
- SPB80N10L Supplier
- Infineon Technologies Distributor
- SPB80N10L Price
- SPB80N10L Distributor
SPB80N10L Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 58A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series OptiMOS™ 3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 88A, 10V Vgs(th) (Max) @ Id 4.2V @ 260µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 19mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 16V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 14.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 584pF @ 100V FET Feature Super Junction Power Dissipation (Max) 98W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 240mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3 |
