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SPB42N03S2L-13 G

SPB42N03S2L-13 G

For Reference Only

Part Number SPB42N03S2L-13 G
PNEDA Part # SPB42N03S2L-13-G
Description MOSFET N-CH 30V 42A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB42N03S2L-13 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB42N03S2L-13 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB42N03S2L-13 G, SPB42N03S2L-13 G Datasheet (Total Pages: 10, Size: 541.42 KB)
PDFSPI42N03S2L-13 Datasheet Cover
SPI42N03S2L-13 Datasheet Page 2 SPI42N03S2L-13 Datasheet Page 3 SPI42N03S2L-13 Datasheet Page 4 SPI42N03S2L-13 Datasheet Page 5 SPI42N03S2L-13 Datasheet Page 6 SPI42N03S2L-13 Datasheet Page 7 SPI42N03S2L-13 Datasheet Page 8 SPI42N03S2L-13 Datasheet Page 9 SPI42N03S2L-13 Datasheet Page 10

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SPB42N03S2L-13 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2V @ 37µA
Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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