SPB20N60S5ATMA1
For Reference Only
| Part Number | SPB20N60S5ATMA1 |
| PNEDA Part # | SPB20N60S5ATMA1 |
| Description | MOSFET N-CH 600V 20A TO-263 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,292 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPB20N60S5ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPB20N60S5ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPB20N60S5ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.65V, 4.5V Rds On (Max) @ Id, Vgs 3.4Ohm @ 10mA, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V FET Feature - Power Dissipation (Max) 310mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-723 Package / Case SOT-723 |
