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SPB160N04S2L03DTMA1

SPB160N04S2L03DTMA1

For Reference Only

Part Number SPB160N04S2L03DTMA1
PNEDA Part # SPB160N04S2L03DTMA1
Description MOSFET N-CH 40V 160A D2PAK-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,146
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB160N04S2L03DTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB160N04S2L03DTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB160N04S2L03DTMA1, SPB160N04S2L03DTMA1 Datasheet (Total Pages: 8, Size: 297.21 KB)
PDFSPB160N04S2L03DTMA1 Datasheet Cover
SPB160N04S2L03DTMA1 Datasheet Page 2 SPB160N04S2L03DTMA1 Datasheet Page 3 SPB160N04S2L03DTMA1 Datasheet Page 4 SPB160N04S2L03DTMA1 Datasheet Page 5 SPB160N04S2L03DTMA1 Datasheet Page 6 SPB160N04S2L03DTMA1 Datasheet Page 7 SPB160N04S2L03DTMA1 Datasheet Page 8

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SPB160N04S2L03DTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8000pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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