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SPB04N50C3ATMA1

SPB04N50C3ATMA1

For Reference Only

Part Number SPB04N50C3ATMA1
PNEDA Part # SPB04N50C3ATMA1
Description MOSFET N-CH 560V 4.5A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB04N50C3ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB04N50C3ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SPB04N50C3ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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