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SMUN2214T1G

SMUN2214T1G

For Reference Only

Part Number SMUN2214T1G
PNEDA Part # SMUN2214T1G
Description TRANS PREBIAS NPN 230MW SC59
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 25,746
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SMUN2214T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSMUN2214T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
SMUN2214T1G, SMUN2214T1G Datasheet (Total Pages: 13, Size: 391.24 KB)
PDFNSVDTC114YM3T5G Datasheet Cover
NSVDTC114YM3T5G Datasheet Page 2 NSVDTC114YM3T5G Datasheet Page 3 NSVDTC114YM3T5G Datasheet Page 4 NSVDTC114YM3T5G Datasheet Page 5 NSVDTC114YM3T5G Datasheet Page 6 NSVDTC114YM3T5G Datasheet Page 7 NSVDTC114YM3T5G Datasheet Page 8 NSVDTC114YM3T5G Datasheet Page 9 NSVDTC114YM3T5G Datasheet Page 10 NSVDTC114YM3T5G Datasheet Page 11

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SMUN2214T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max230mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59

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SMUN2214T3G

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Mounting Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Supplier Device Package

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Toshiba Semiconductor and Storage

Manufacturer

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Series

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

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Supplier Device Package

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Nexperia

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Series

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Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Supplier Device Package

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Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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