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SIZF300DT-T1-GE3

SIZF300DT-T1-GE3

For Reference Only

Part Number SIZF300DT-T1-GE3
PNEDA Part # SIZF300DT-T1-GE3
Description MOSFET DUAL N-CHAN 30V PPAIR 3X3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZF300DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZF300DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZF300DT-T1-GE3, SIZF300DT-T1-GE3 Datasheet (Total Pages: 13, Size: 259.26 KB)
PDFSIZF300DT-T1-GE3 Datasheet Cover
SIZF300DT-T1-GE3 Datasheet Page 2 SIZF300DT-T1-GE3 Datasheet Page 3 SIZF300DT-T1-GE3 Datasheet Page 4 SIZF300DT-T1-GE3 Datasheet Page 5 SIZF300DT-T1-GE3 Datasheet Page 6 SIZF300DT-T1-GE3 Datasheet Page 7 SIZF300DT-T1-GE3 Datasheet Page 8 SIZF300DT-T1-GE3 Datasheet Page 9 SIZF300DT-T1-GE3 Datasheet Page 10 SIZF300DT-T1-GE3 Datasheet Page 11

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SIZF300DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V, 3150pF @ 15V
Power - Max3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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