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SIZ320DT-T1-GE3

SIZ320DT-T1-GE3

For Reference Only

Part Number SIZ320DT-T1-GE3
PNEDA Part # SIZ320DT-T1-GE3
Description MOSFET 2N-CH 25V 30/40A 8POWER33
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 28,218
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ320DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ320DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ320DT-T1-GE3, SIZ320DT-T1-GE3 Datasheet (Total Pages: 14, Size: 362.6 KB)
PDFSIZ320DT-T1-GE3 Datasheet Cover
SIZ320DT-T1-GE3 Datasheet Page 2 SIZ320DT-T1-GE3 Datasheet Page 3 SIZ320DT-T1-GE3 Datasheet Page 4 SIZ320DT-T1-GE3 Datasheet Page 5 SIZ320DT-T1-GE3 Datasheet Page 6 SIZ320DT-T1-GE3 Datasheet Page 7 SIZ320DT-T1-GE3 Datasheet Page 8 SIZ320DT-T1-GE3 Datasheet Page 9 SIZ320DT-T1-GE3 Datasheet Page 10 SIZ320DT-T1-GE3 Datasheet Page 11

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SIZ320DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesPowerPAIR®, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V, 11.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 12.5V, 1370pF @ 12.5V
Power - Max16.7W, 31W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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