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SIUD412ED-T1-GE3

SIUD412ED-T1-GE3

For Reference Only

Part Number SIUD412ED-T1-GE3
PNEDA Part # SIUD412ED-T1-GE3
Description MOSFET N-CH 12V 500MA PWRPAK0806
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIUD412ED-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIUD412ED-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIUD412ED-T1-GE3, SIUD412ED-T1-GE3 Datasheet (Total Pages: 9, Size: 218.42 KB)
PDFSIUD412ED-T1-GE3 Datasheet Cover
SIUD412ED-T1-GE3 Datasheet Page 2 SIUD412ED-T1-GE3 Datasheet Page 3 SIUD412ED-T1-GE3 Datasheet Page 4 SIUD412ED-T1-GE3 Datasheet Page 5 SIUD412ED-T1-GE3 Datasheet Page 6 SIUD412ED-T1-GE3 Datasheet Page 7 SIUD412ED-T1-GE3 Datasheet Page 8 SIUD412ED-T1-GE3 Datasheet Page 9

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SIUD412ED-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs340mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.71nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds21pF @ 6V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 0806
Package / CasePowerPAK® 0806

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