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SISS26DN-T1-GE3

SISS26DN-T1-GE3

For Reference Only

Part Number SISS26DN-T1-GE3
PNEDA Part # SISS26DN-T1-GE3
Description MOSFET N-CHANNEL 60V 60A 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 100,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS26DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS26DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS26DN-T1-GE3, SISS26DN-T1-GE3 Datasheet (Total Pages: 9, Size: 298.35 KB)
PDFSISS26DN-T1-GE3 Datasheet Cover
SISS26DN-T1-GE3 Datasheet Page 2 SISS26DN-T1-GE3 Datasheet Page 3 SISS26DN-T1-GE3 Datasheet Page 4 SISS26DN-T1-GE3 Datasheet Page 5 SISS26DN-T1-GE3 Datasheet Page 6 SISS26DN-T1-GE3 Datasheet Page 7 SISS26DN-T1-GE3 Datasheet Page 8 SISS26DN-T1-GE3 Datasheet Page 9

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SISS26DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 30V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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