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SISHA12ADN-T1-GE3

SISHA12ADN-T1-GE3

For Reference Only

Part Number SISHA12ADN-T1-GE3
PNEDA Part # SISHA12ADN-T1-GE3
Description MOSFET N-CH 30V PP 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISHA12ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISHA12ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISHA12ADN-T1-GE3, SISHA12ADN-T1-GE3 Datasheet (Total Pages: 9, Size: 217.93 KB)
PDFSISHA12ADN-T1-GE3 Datasheet Cover
SISHA12ADN-T1-GE3 Datasheet Page 2 SISHA12ADN-T1-GE3 Datasheet Page 3 SISHA12ADN-T1-GE3 Datasheet Page 4 SISHA12ADN-T1-GE3 Datasheet Page 5 SISHA12ADN-T1-GE3 Datasheet Page 6 SISHA12ADN-T1-GE3 Datasheet Page 7 SISHA12ADN-T1-GE3 Datasheet Page 8 SISHA12ADN-T1-GE3 Datasheet Page 9

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SISHA12ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds2070pF @ 15V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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