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SISH112DN-T1-GE3

SISH112DN-T1-GE3

For Reference Only

Part Number SISH112DN-T1-GE3
PNEDA Part # SISH112DN-T1-GE3
Description MOSFET N-CH 30V 1212-8 PPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 49,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISH112DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISH112DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISH112DN-T1-GE3, SISH112DN-T1-GE3 Datasheet (Total Pages: 8, Size: 184.24 KB)
PDFSISH112DN-T1-GE3 Datasheet Cover
SISH112DN-T1-GE3 Datasheet Page 2 SISH112DN-T1-GE3 Datasheet Page 3 SISH112DN-T1-GE3 Datasheet Page 4 SISH112DN-T1-GE3 Datasheet Page 5 SISH112DN-T1-GE3 Datasheet Page 6 SISH112DN-T1-GE3 Datasheet Page 7 SISH112DN-T1-GE3 Datasheet Page 8

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SISH112DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2610pF @ 15V
FET Feature-
Power Dissipation (Max)1.5W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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