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SISH108DN-T1-GE3

SISH108DN-T1-GE3

For Reference Only

Part Number SISH108DN-T1-GE3
PNEDA Part # SISH108DN-T1-GE3
Description MOSFET N-CHAN 20 V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 45,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISH108DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISH108DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISH108DN-T1-GE3, SISH108DN-T1-GE3 Datasheet (Total Pages: 8, Size: 184.79 KB)
PDFSISH108DN-T1-GE3 Datasheet Cover
SISH108DN-T1-GE3 Datasheet Page 2 SISH108DN-T1-GE3 Datasheet Page 3 SISH108DN-T1-GE3 Datasheet Page 4 SISH108DN-T1-GE3 Datasheet Page 5 SISH108DN-T1-GE3 Datasheet Page 6 SISH108DN-T1-GE3 Datasheet Page 7 SISH108DN-T1-GE3 Datasheet Page 8

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SISH108DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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