SISH108DN-T1-GE3
For Reference Only
| Part Number | SISH108DN-T1-GE3 |
| PNEDA Part # | SISH108DN-T1-GE3 |
| Description | MOSFET N-CHAN 20 V POWERPAK 1212 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 45,480 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SISH108DN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SISH108DN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SISH108DN-T1-GE3 Datasheet
- where to find SISH108DN-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SISH108DN-T1-GE3
- SISH108DN-T1-GE3 PDF Datasheet
- SISH108DN-T1-GE3 Stock
- SISH108DN-T1-GE3 Pinout
- Datasheet SISH108DN-T1-GE3
- SISH108DN-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SISH108DN-T1-GE3 Price
- SISH108DN-T1-GE3 Distributor
SISH108DN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen II |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Package / Case | PowerPAK® 1212-8SH |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolGaN™ FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 400V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-DSO-20-85 Package / Case 20-PowerSOIC (0.433", 11.00mm Width) |
Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 266nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V FET Feature - Power Dissipation (Max) 600W (Tc) Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package ISOTOP® Package / Case ISOTOP |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature Current Sensing Power Dissipation (Max) 272W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-426 Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Manufacturer IXYS Series PolarHT™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V, 15V Rds On (Max) @ Id, Vgs 18mOhm @ 70A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V FET Feature - Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 12.6mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
