SISC29N20DX1SA1
For Reference Only
| Part Number | SISC29N20DX1SA1 |
| PNEDA Part # | SISC29N20DX1SA1 |
| Description | TRANSISTOR P-CH BARE DIE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,182 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SISC29N20DX1SA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SISC29N20DX1SA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SISC29N20DX1SA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 94A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 15V FET Feature - Power Dissipation (Max) 89W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series CoolMOS™ P6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 100V FET Feature - Power Dissipation (Max) 89.3W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-ThinPak (5x6) Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 69A, 10V Vgs(th) (Max) @ Id 2.2V @ 115µA Gate Charge (Qg) (Max) @ Vgs 273nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 13060pF @ 25V FET Feature - Power Dissipation (Max) 165W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
