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SISA96DN-T1-GE3

SISA96DN-T1-GE3

For Reference Only

Part Number SISA96DN-T1-GE3
PNEDA Part # SISA96DN-T1-GE3
Description MOSFET N-CH 30V 16A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,730
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA96DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA96DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA96DN-T1-GE3, SISA96DN-T1-GE3 Datasheet (Total Pages: 7, Size: 206.25 KB)
PDFSISA96DN-T1-GE3 Datasheet Cover
SISA96DN-T1-GE3 Datasheet Page 2 SISA96DN-T1-GE3 Datasheet Page 3 SISA96DN-T1-GE3 Datasheet Page 4 SISA96DN-T1-GE3 Datasheet Page 5 SISA96DN-T1-GE3 Datasheet Page 6 SISA96DN-T1-GE3 Datasheet Page 7

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SISA96DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1385pF @ 15V
FET Feature-
Power Dissipation (Max)26.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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