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SISA66DN-T1-GE3

SISA66DN-T1-GE3

For Reference Only

Part Number SISA66DN-T1-GE3
PNEDA Part # SISA66DN-T1-GE3
Description MOSFET N-CH 30V 40A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA66DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA66DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA66DN-T1-GE3, SISA66DN-T1-GE3 Datasheet (Total Pages: 13, Size: 586.99 KB)
PDFSISA66DN-T1-GE3 Datasheet Cover
SISA66DN-T1-GE3 Datasheet Page 2 SISA66DN-T1-GE3 Datasheet Page 3 SISA66DN-T1-GE3 Datasheet Page 4 SISA66DN-T1-GE3 Datasheet Page 5 SISA66DN-T1-GE3 Datasheet Page 6 SISA66DN-T1-GE3 Datasheet Page 7 SISA66DN-T1-GE3 Datasheet Page 8 SISA66DN-T1-GE3 Datasheet Page 9 SISA66DN-T1-GE3 Datasheet Page 10 SISA66DN-T1-GE3 Datasheet Page 11

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SISA66DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3014pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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