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SISA18ADN-T1-GE3

SISA18ADN-T1-GE3

For Reference Only

Part Number SISA18ADN-T1-GE3
PNEDA Part # SISA18ADN-T1-GE3
Description MOSFET N-CH 30V 38.3A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 149,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA18ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA18ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA18ADN-T1-GE3, SISA18ADN-T1-GE3 Datasheet (Total Pages: 13, Size: 574.1 KB)
PDFSISA18ADN-T1-GE3 Datasheet Cover
SISA18ADN-T1-GE3 Datasheet Page 2 SISA18ADN-T1-GE3 Datasheet Page 3 SISA18ADN-T1-GE3 Datasheet Page 4 SISA18ADN-T1-GE3 Datasheet Page 5 SISA18ADN-T1-GE3 Datasheet Page 6 SISA18ADN-T1-GE3 Datasheet Page 7 SISA18ADN-T1-GE3 Datasheet Page 8 SISA18ADN-T1-GE3 Datasheet Page 9 SISA18ADN-T1-GE3 Datasheet Page 10 SISA18ADN-T1-GE3 Datasheet Page 11

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SISA18ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C38.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21.5nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 19.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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