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SISA16DN-T1-GE3

SISA16DN-T1-GE3

For Reference Only

Part Number SISA16DN-T1-GE3
PNEDA Part # SISA16DN-T1-GE3
Description MOSFET N-CH 30V D-S PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA16DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA16DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SISA16DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 15V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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