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SIS902DN-T1-GE3

SIS902DN-T1-GE3

For Reference Only

Part Number SIS902DN-T1-GE3
PNEDA Part # SIS902DN-T1-GE3
Description MOSFET 2N-CH 75V 4A PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS902DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS902DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIS902DN-T1-GE3, SIS902DN-T1-GE3 Datasheet (Total Pages: 8, Size: 93.43 KB)
PDFSIS902DN-T1-GE3 Datasheet Cover
SIS902DN-T1-GE3 Datasheet Page 2 SIS902DN-T1-GE3 Datasheet Page 3 SIS902DN-T1-GE3 Datasheet Page 4 SIS902DN-T1-GE3 Datasheet Page 5 SIS902DN-T1-GE3 Datasheet Page 6 SIS902DN-T1-GE3 Datasheet Page 7 SIS902DN-T1-GE3 Datasheet Page 8

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SIS902DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs186mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds175pF @ 38V
Power - Max15.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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