SIS902DN-T1-GE3

For Reference Only
Part Number | SIS902DN-T1-GE3 |
PNEDA Part # | SIS902DN-T1-GE3 |
Description | MOSFET 2N-CH 75V 4A PPAK 1212-8 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 6,912 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIS902DN-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SIS902DN-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SIS902DN-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 186mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 38V |
Power - Max | 15.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |
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