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SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

For Reference Only

Part Number SIS892ADN-T1-GE3
PNEDA Part # SIS892ADN-T1-GE3
Description MOSFET N-CH 100V 28A PPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 77,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS892ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS892ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS892ADN-T1-GE3, SIS892ADN-T1-GE3 Datasheet (Total Pages: 13, Size: 544.82 KB)
PDFSIS892ADN-T1-GE3 Datasheet Cover
SIS892ADN-T1-GE3 Datasheet Page 2 SIS892ADN-T1-GE3 Datasheet Page 3 SIS892ADN-T1-GE3 Datasheet Page 4 SIS892ADN-T1-GE3 Datasheet Page 5 SIS892ADN-T1-GE3 Datasheet Page 6 SIS892ADN-T1-GE3 Datasheet Page 7 SIS892ADN-T1-GE3 Datasheet Page 8 SIS892ADN-T1-GE3 Datasheet Page 9 SIS892ADN-T1-GE3 Datasheet Page 10 SIS892ADN-T1-GE3 Datasheet Page 11

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SIS892ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 50V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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