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SIS888DN-T1-GE3

SIS888DN-T1-GE3

For Reference Only

Part Number SIS888DN-T1-GE3
PNEDA Part # SIS888DN-T1-GE3
Description MOSFET N-CH 150V 20.2A 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS888DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS888DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS888DN-T1-GE3, SIS888DN-T1-GE3 Datasheet (Total Pages: 9, Size: 204.33 KB)
PDFSIS888DN-T1-GE3 Datasheet Cover
SIS888DN-T1-GE3 Datasheet Page 2 SIS888DN-T1-GE3 Datasheet Page 3 SIS888DN-T1-GE3 Datasheet Page 4 SIS888DN-T1-GE3 Datasheet Page 5 SIS888DN-T1-GE3 Datasheet Page 6 SIS888DN-T1-GE3 Datasheet Page 7 SIS888DN-T1-GE3 Datasheet Page 8 SIS888DN-T1-GE3 Datasheet Page 9

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SIS888DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 75V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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