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SIS612EDNT-T1-GE3

SIS612EDNT-T1-GE3

For Reference Only

Part Number SIS612EDNT-T1-GE3
PNEDA Part # SIS612EDNT-T1-GE3
Description MOSFET N-CH 20V 50A SMT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS612EDNT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS612EDNT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS612EDNT-T1-GE3, SIS612EDNT-T1-GE3 Datasheet (Total Pages: 8, Size: 206.48 KB)
PDFSIS612EDNT-T1-GE3 Datasheet Cover
SIS612EDNT-T1-GE3 Datasheet Page 2 SIS612EDNT-T1-GE3 Datasheet Page 3 SIS612EDNT-T1-GE3 Datasheet Page 4 SIS612EDNT-T1-GE3 Datasheet Page 5 SIS612EDNT-T1-GE3 Datasheet Page 6 SIS612EDNT-T1-GE3 Datasheet Page 7 SIS612EDNT-T1-GE3 Datasheet Page 8

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SIS612EDNT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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