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SIS472ADN-T1-GE3

SIS472ADN-T1-GE3

For Reference Only

Part Number SIS472ADN-T1-GE3
PNEDA Part # SIS472ADN-T1-GE3
Description MOSFET N-CH 30V 24A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,408
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS472ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS472ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS472ADN-T1-GE3, SIS472ADN-T1-GE3 Datasheet (Total Pages: 13, Size: 556.42 KB)
PDFSIS472ADN-T1-GE3 Datasheet Cover
SIS472ADN-T1-GE3 Datasheet Page 2 SIS472ADN-T1-GE3 Datasheet Page 3 SIS472ADN-T1-GE3 Datasheet Page 4 SIS472ADN-T1-GE3 Datasheet Page 5 SIS472ADN-T1-GE3 Datasheet Page 6 SIS472ADN-T1-GE3 Datasheet Page 7 SIS472ADN-T1-GE3 Datasheet Page 8 SIS472ADN-T1-GE3 Datasheet Page 9 SIS472ADN-T1-GE3 Datasheet Page 10 SIS472ADN-T1-GE3 Datasheet Page 11

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SIS472ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1515pF @ 15V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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