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SIS447DN-T1-GE3

SIS447DN-T1-GE3

For Reference Only

Part Number SIS447DN-T1-GE3
PNEDA Part # SIS447DN-T1-GE3
Description MOSFET P-CH 20V 18A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS447DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS447DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS447DN-T1-GE3, SIS447DN-T1-GE3 Datasheet (Total Pages: 13, Size: 626.92 KB)
PDFSIS447DN-T1-GE3 Datasheet Cover
SIS447DN-T1-GE3 Datasheet Page 2 SIS447DN-T1-GE3 Datasheet Page 3 SIS447DN-T1-GE3 Datasheet Page 4 SIS447DN-T1-GE3 Datasheet Page 5 SIS447DN-T1-GE3 Datasheet Page 6 SIS447DN-T1-GE3 Datasheet Page 7 SIS447DN-T1-GE3 Datasheet Page 8 SIS447DN-T1-GE3 Datasheet Page 9 SIS447DN-T1-GE3 Datasheet Page 10 SIS447DN-T1-GE3 Datasheet Page 11

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SIS447DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs7.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs181nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds5590pF @ 10V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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