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SIS439DNT-T1-GE3

SIS439DNT-T1-GE3

For Reference Only

Part Number SIS439DNT-T1-GE3
PNEDA Part # SIS439DNT-T1-GE3
Description MOSFET P-CH 30V 50A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,086
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS439DNT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS439DNT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS439DNT-T1-GE3, SIS439DNT-T1-GE3 Datasheet (Total Pages: 8, Size: 209.98 KB)
PDFSIS439DNT-T1-GE3 Datasheet Cover
SIS439DNT-T1-GE3 Datasheet Page 2 SIS439DNT-T1-GE3 Datasheet Page 3 SIS439DNT-T1-GE3 Datasheet Page 4 SIS439DNT-T1-GE3 Datasheet Page 5 SIS439DNT-T1-GE3 Datasheet Page 6 SIS439DNT-T1-GE3 Datasheet Page 7 SIS439DNT-T1-GE3 Datasheet Page 8

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SIS439DNT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2135pF @ 15V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52.1W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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