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SIS415DNT-T1-GE3

SIS415DNT-T1-GE3

For Reference Only

Part Number SIS415DNT-T1-GE3
PNEDA Part # SIS415DNT-T1-GE3
Description MOSFET P-CH 20V 35A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS415DNT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS415DNT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS415DNT-T1-GE3, SIS415DNT-T1-GE3 Datasheet (Total Pages: 8, Size: 202.1 KB)
PDFSIS415DNT-T1-GE3 Datasheet Cover
SIS415DNT-T1-GE3 Datasheet Page 2 SIS415DNT-T1-GE3 Datasheet Page 3 SIS415DNT-T1-GE3 Datasheet Page 4 SIS415DNT-T1-GE3 Datasheet Page 5 SIS415DNT-T1-GE3 Datasheet Page 6 SIS415DNT-T1-GE3 Datasheet Page 7 SIS415DNT-T1-GE3 Datasheet Page 8

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SIS415DNT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds5460pF @ 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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