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SIS108DN-T1-GE3

SIS108DN-T1-GE3

For Reference Only

Part Number SIS108DN-T1-GE3
PNEDA Part # SIS108DN-T1-GE3
Description MOSFET N-CH 80V PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS108DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS108DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS108DN-T1-GE3, SIS108DN-T1-GE3 Datasheet (Total Pages: 9, Size: 239.13 KB)
PDFSIS108DN-T1-GE3 Datasheet Cover
SIS108DN-T1-GE3 Datasheet Page 2 SIS108DN-T1-GE3 Datasheet Page 3 SIS108DN-T1-GE3 Datasheet Page 4 SIS108DN-T1-GE3 Datasheet Page 5 SIS108DN-T1-GE3 Datasheet Page 6 SIS108DN-T1-GE3 Datasheet Page 7 SIS108DN-T1-GE3 Datasheet Page 8 SIS108DN-T1-GE3 Datasheet Page 9

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SIS108DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds545pF @ 40V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 24W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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