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SIRA99DP-T1-GE3

SIRA99DP-T1-GE3

For Reference Only

Part Number SIRA99DP-T1-GE3
PNEDA Part # SIRA99DP-T1-GE3
Description MOSFET P-CH 30V PP SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA99DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA99DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA99DP-T1-GE3, SIRA99DP-T1-GE3 Datasheet (Total Pages: 9, Size: 244.87 KB)
PDFSIRA99DP-T1-GE3 Datasheet Cover
SIRA99DP-T1-GE3 Datasheet Page 2 SIRA99DP-T1-GE3 Datasheet Page 3 SIRA99DP-T1-GE3 Datasheet Page 4 SIRA99DP-T1-GE3 Datasheet Page 5 SIRA99DP-T1-GE3 Datasheet Page 6 SIRA99DP-T1-GE3 Datasheet Page 7 SIRA99DP-T1-GE3 Datasheet Page 8 SIRA99DP-T1-GE3 Datasheet Page 9

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SIRA99DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C47.9A (Ta), 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds10955pF @ 15V
FET Feature-
Power Dissipation (Max)6.35W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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