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SIRA58ADP-T1-RE3

SIRA58ADP-T1-RE3

For Reference Only

Part Number SIRA58ADP-T1-RE3
PNEDA Part # SIRA58ADP-T1-RE3
Description MOSFET N-CH 40V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA58ADP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA58ADP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA58ADP-T1-RE3, SIRA58ADP-T1-RE3 Datasheet (Total Pages: 13, Size: 384.09 KB)
PDFSIRA58ADP-T1-RE3 Datasheet Cover
SIRA58ADP-T1-RE3 Datasheet Page 2 SIRA58ADP-T1-RE3 Datasheet Page 3 SIRA58ADP-T1-RE3 Datasheet Page 4 SIRA58ADP-T1-RE3 Datasheet Page 5 SIRA58ADP-T1-RE3 Datasheet Page 6 SIRA58ADP-T1-RE3 Datasheet Page 7 SIRA58ADP-T1-RE3 Datasheet Page 8 SIRA58ADP-T1-RE3 Datasheet Page 9 SIRA58ADP-T1-RE3 Datasheet Page 10 SIRA58ADP-T1-RE3 Datasheet Page 11

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SIRA58ADP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3030pF @ 20V
FET Feature-
Power Dissipation (Max)5W (Ta), 56.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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