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SIRA50ADP-T1-RE3

SIRA50ADP-T1-RE3

For Reference Only

Part Number SIRA50ADP-T1-RE3
PNEDA Part # SIRA50ADP-T1-RE3
Description MOSFET N-CHAN 40V PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,118
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA50ADP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA50ADP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA50ADP-T1-RE3, SIRA50ADP-T1-RE3 Datasheet (Total Pages: 13, Size: 385.2 KB)
PDFSIRA50ADP-T1-RE3 Datasheet Cover
SIRA50ADP-T1-RE3 Datasheet Page 2 SIRA50ADP-T1-RE3 Datasheet Page 3 SIRA50ADP-T1-RE3 Datasheet Page 4 SIRA50ADP-T1-RE3 Datasheet Page 5 SIRA50ADP-T1-RE3 Datasheet Page 6 SIRA50ADP-T1-RE3 Datasheet Page 7 SIRA50ADP-T1-RE3 Datasheet Page 8 SIRA50ADP-T1-RE3 Datasheet Page 9 SIRA50ADP-T1-RE3 Datasheet Page 10 SIRA50ADP-T1-RE3 Datasheet Page 11

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SIRA50ADP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds7300pF @ 20V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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