Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

For Reference Only

Part Number SIRA10BDP-T1-GE3
PNEDA Part # SIRA10BDP-T1-GE3
Description MOSFET N-CHAN 30V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA10BDP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA10BDP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA10BDP-T1-GE3, SIRA10BDP-T1-GE3 Datasheet (Total Pages: 13, Size: 422.04 KB)
PDFSIRA10BDP-T1-GE3 Datasheet Cover
SIRA10BDP-T1-GE3 Datasheet Page 2 SIRA10BDP-T1-GE3 Datasheet Page 3 SIRA10BDP-T1-GE3 Datasheet Page 4 SIRA10BDP-T1-GE3 Datasheet Page 5 SIRA10BDP-T1-GE3 Datasheet Page 6 SIRA10BDP-T1-GE3 Datasheet Page 7 SIRA10BDP-T1-GE3 Datasheet Page 8 SIRA10BDP-T1-GE3 Datasheet Page 9 SIRA10BDP-T1-GE3 Datasheet Page 10 SIRA10BDP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIRA10BDP-T1-GE3 Datasheet
  • where to find SIRA10BDP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIRA10BDP-T1-GE3
  • SIRA10BDP-T1-GE3 PDF Datasheet
  • SIRA10BDP-T1-GE3 Stock

  • SIRA10BDP-T1-GE3 Pinout
  • Datasheet SIRA10BDP-T1-GE3
  • SIRA10BDP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIRA10BDP-T1-GE3 Price
  • SIRA10BDP-T1-GE3 Distributor

SIRA10BDP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36.2nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 15V
FET Feature-
Power Dissipation (Max)5W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

SQ2361AEES-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

-55°C ~ 175°C (TA)

Mounting Type

Surface Mount

Supplier Device Package

-

Package / Case

TO-236-3, SC-59, SOT-23-3

NTGS4111PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 15V

FET Feature

-

Power Dissipation (Max)

630mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6

AUIRFS8408-7P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

315nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10250pF @ 25V

FET Feature

-

Power Dissipation (Max)

294W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMN13H750S-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

130V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

750mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

231pF @ 25V

FET Feature

-

Power Dissipation (Max)

770mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 65A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4770pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

EKXG401ELL820MM25S

EKXG401ELL820MM25S

United Chemi-Con

CAP ALUM 82UF 20% 400V RADIAL

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

MAX7360ETL+

MAX7360ETL+

Maxim Integrated

IC CTRLR KEY-SW I2C 40TQFN

MAX238CWG

MAX238CWG

Maxim Integrated

IC TRANSCEIVER FULL 4/4 24SOIC

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23