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SIR888DP-T1-GE3

SIR888DP-T1-GE3

For Reference Only

Part Number SIR888DP-T1-GE3
PNEDA Part # SIR888DP-T1-GE3
Description MOSFET N-CH 25V 40A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR888DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR888DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR888DP-T1-GE3, SIR888DP-T1-GE3 Datasheet (Total Pages: 7, Size: 131.39 KB)
PDFSIR888DP-T1-GE3 Datasheet Cover
SIR888DP-T1-GE3 Datasheet Page 2 SIR888DP-T1-GE3 Datasheet Page 3 SIR888DP-T1-GE3 Datasheet Page 4 SIR888DP-T1-GE3 Datasheet Page 5 SIR888DP-T1-GE3 Datasheet Page 6 SIR888DP-T1-GE3 Datasheet Page 7

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SIR888DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5065pF @ 15V
FET Feature-
Power Dissipation (Max)5W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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