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SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

For Reference Only

Part Number SIR882ADP-T1-GE3
PNEDA Part # SIR882ADP-T1-GE3
Description MOSFET N-CH 100V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR882ADP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR882ADP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR882ADP-T1-GE3, SIR882ADP-T1-GE3 Datasheet (Total Pages: 13, Size: 372.47 KB)
PDFSIR882ADP-T1-GE3 Datasheet Cover
SIR882ADP-T1-GE3 Datasheet Page 2 SIR882ADP-T1-GE3 Datasheet Page 3 SIR882ADP-T1-GE3 Datasheet Page 4 SIR882ADP-T1-GE3 Datasheet Page 5 SIR882ADP-T1-GE3 Datasheet Page 6 SIR882ADP-T1-GE3 Datasheet Page 7 SIR882ADP-T1-GE3 Datasheet Page 8 SIR882ADP-T1-GE3 Datasheet Page 9 SIR882ADP-T1-GE3 Datasheet Page 10 SIR882ADP-T1-GE3 Datasheet Page 11

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SIR882ADP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1975pF @ 50V
FET Feature-
Power Dissipation (Max)5.4W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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