SIR870ADP-T1-RE3
For Reference Only
| Part Number | SIR870ADP-T1-RE3 |
| PNEDA Part # | SIR870ADP-T1-RE3 |
| Description | MOSFET N-CH 100V 60A POWERPAKSO |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 27,498 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIR870ADP-T1-RE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIR870ADP-T1-RE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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SIR870ADP-T1-RE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2866pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
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Manufacturer Panasonic Electronic Components Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12pF @ 3V FET Feature - Power Dissipation (Max) 125mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SSMini3-F3-B Package / Case SC-89, SOT-490 |
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 169nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12030pF @ 25V FET Feature - Power Dissipation (Max) 349W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
