Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIR870ADP-T1-RE3

SIR870ADP-T1-RE3

For Reference Only

Part Number SIR870ADP-T1-RE3
PNEDA Part # SIR870ADP-T1-RE3
Description MOSFET N-CH 100V 60A POWERPAKSO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,498
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR870ADP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR870ADP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIR870ADP-T1-RE3 Datasheet
  • where to find SIR870ADP-T1-RE3
  • Vishay Siliconix

  • Vishay Siliconix SIR870ADP-T1-RE3
  • SIR870ADP-T1-RE3 PDF Datasheet
  • SIR870ADP-T1-RE3 Stock

  • SIR870ADP-T1-RE3 Pinout
  • Datasheet SIR870ADP-T1-RE3
  • SIR870ADP-T1-RE3 Supplier

  • Vishay Siliconix Distributor
  • SIR870ADP-T1-RE3 Price
  • SIR870ADP-T1-RE3 Distributor

SIR870ADP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2866pF @ 50V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

HUFA76419P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

NVD4856NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

13.3A (Ta), 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2241pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.33W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FK3906010L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

12Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

12pF @ 3V

FET Feature

-

Power Dissipation (Max)

125mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SSMini3-F3-B

Package / Case

SC-89, SOT-490

SI3454CDV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 1.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

IRF3711ZSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 10V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

TAJA226M010RNJ

TAJA226M010RNJ

CAP TANT 22UF 20% 10V 1206

MAX912ESE+

MAX912ESE+

Maxim Integrated

IC COMPARATOR LP 16-SOIC

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

MT41K512M16HA-125:A

MT41K512M16HA-125:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

V5.5MLA0603NH

V5.5MLA0603NH

Littelfuse

VARISTOR 8.2V 30A 0603

MC74HC373ADWG

MC74HC373ADWG

ON Semiconductor

IC TRANSP LATCH OCT 3ST 20-SOIC

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

MTA8ATF51264HZ-2G6B1

MTA8ATF51264HZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

RK7002BMT116

RK7002BMT116

Rohm Semiconductor

MOSFET N-CH 60V 0.25A SST3

NC7SB3157P6X

NC7SB3157P6X

ON Semiconductor

IC SWITCH SPDT SC70-6

3403.0166.11

3403.0166.11

Schurter

FUSE BOARD MNT 1A 250VAC 125VDC

FXMA2102UMX

FXMA2102UMX

ON Semiconductor

IC TRNSLTR BIDIRECTIONAL 8MLP